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Transistors - IGBTs - Arrays
FII50-12E Picture

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FII50-12E

  • IXYS
  • New
  • IGBT H BRIDGE 1200V 50A I4PAK5
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In Stock:17,014(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
IGBT Type
NPT
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Power - Max
200 W
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 30A
Current - Collector Cutoff (Max)
400 µA
Input Capacitance (Cies) @ Vce
2 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
i4-Pac™-5
Supplier Device Package
ISOPLUS i4-PAC™
Other
Price advantage, FII50-12E is available in stock and can be delivered on the same day
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