FII30-12E Details_FII30-12E Related parameters PDF

Transistors - IGBTs - Arrays

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Configuration	Half Bridge
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	33 A
Power - Max	150 W
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 20A
Current - Collector Cutoff (Max)	200 µA
Input Capacitance (Cies) @ Vce	1.2 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	i4-Pac™-5
Supplier Device Package	ISOPLUS i4-PAC™

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