IPSA70R1K4P7SAKMA1 Details_IPSA70R1K4P7SAKMA1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	CoolMOS™ P7
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	4.7 nC @ 400 V
Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	158 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	22.7W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO251-3
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

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