PSMN4R3-40MLHX Details_PSMN4R3-40MLHX Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	95A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3007 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	90W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK33
Package / Case	SOT-1210, 8-LFPAK33 (5-Lead)

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