2N4449 Details_2N4449 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	-
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	450mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	400nA
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 100mA, 1V
Power - Max	360 mW
Frequency - Transition	-
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AB, TO-46-3 Metal Can
Supplier Device Package	TO-46 (TO-206AB)

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