MSD602-RT1 Details_MSD602-RT1 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 150mA, 10V
Power - Max	200 mW
Frequency - Transition	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SC-59

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