2N2609 Details_2N2609 Related parameters PDF

Transistors - JFETs

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Specifications

Description	Details
Series	-
Package	Bag
FET Type	P-Channel
Voltage - Breakdown (V(BR)GSS)	30 V
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	2 mA @ 5 V
Current Drain (Id) - Max	10 mA
Voltage - Cutoff (VGS off) @ Id	750 mV @ 1 A
Input Capacitance (Ciss) (Max) @ Vds	10pF @ 5V
Resistance - RDS(On)	-
Power - Max	300 mW
Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AA, TO-18-3 Metal Can
Supplier Device Package	TO-18 (TO-206AA)

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