IXGR50N60B2D1 Details_IXGR50N60B2D1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	HiPerFAST™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	68 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 40A
Power - Max	200 W
Switching Energy	550µJ (off)
Input Type	Standard
Gate Charge	140 nC
Td (on/off) @ 25°C	18ns/190ns
Test Condition	480V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)	35 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Supplier Device Package	ISOPLUS247™

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