DGTD65T50S1PT Details_DGTD65T50S1PT Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Field Stop
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	100 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 50A
Power - Max	375 W
Switching Energy	770µJ (on), 550µJ (off)
Input Type	Standard
Gate Charge	287 nC
Td (on/off) @ 25°C	58ns/328ns
Test Condition	400V, 50A, 7.9Ohm, 15V
Reverse Recovery Time (trr)	80 ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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