IXYT30N65C3H1HV Details_IXYT30N65C3H1HV Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	118 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 30A
Power - Max	270 W
Switching Energy	1mJ (on), 270µJ (off)
Input Type	Standard
Gate Charge	44 nC
Td (on/off) @ 25°C	21ns/75ns
Test Condition	400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)	120 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268

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