IXBT10N170 Details_IXBT10N170 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	40 A
Vce(on) (Max) @ Vge, Ic	3.8V @ 15V, 10A
Power - Max	140 W
Switching Energy	6mJ (off)
Input Type	Standard
Gate Charge	30 nC
Td (on/off) @ 25°C	35ns/500ns
Test Condition	1360V, 10A, 56Ohm, 15V
Reverse Recovery Time (trr)	360 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268

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