IXBX75N170A Details_IXBX75N170A Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	110 A
Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	6V @ 15V, 42A
Power - Max	1040 W
Switching Energy	3.8mJ (off)
Input Type	Standard
Gate Charge	358 nC
Td (on/off) @ 25°C	26ns/418ns
Test Condition	1360V, 42A, 1Ohm, 15V
Reverse Recovery Time (trr)	360 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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