IXGX32N170AH1 Details_IXGX32N170AH1 Related parameters PDF

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	32 A
Current - Collector Pulsed (Icm)	110 A
Vce(on) (Max) @ Vge, Ic	5V @ 15V, 21A
Power - Max	350 W
Switching Energy	4.1mJ (on), 1.25mJ (off)
Input Type	Standard
Gate Charge	157 nC
Td (on/off) @ 25°C	27ns/270ns
Test Condition	850V, 32A, 2.7Ohm, 15V
Reverse Recovery Time (trr)	150 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PLUS247™-3

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