FZ800R12KS4B2NOSA1 Details_FZ800R12KS4B2NOSA1 Related parameters PDF

Transistors - IGBTs - Modules

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,396(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1325.23337	$1325.23337

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
IGBT Type	-
Configuration	Single
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	1200 A
Power - Max	7600 W
Vce(on) (Max) @ Vge, Ic	3.7V @ 15V, 800A
Current - Collector Cutoff (Max)	5 mA
Input Capacitance (Cies) @ Vce	52 nF @ 25 V
Input	Standard
NTC Thermistor	No
Operating Temperature	-40°C ~ 125°C
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, FZ800R12KS4B2NOSA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRG5K50HF12A	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 100A POWIR 34	No price	In Stock:18520
IRG7T300SD12B	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 1200V 600A POWIR 62	No price	In Stock:18522
NXH350N100H4Q2F2S1G	ON Semiconductor	Transistors - IGBTs - Modules	Datasheet	IC PWR MODULE 1000V 350A PIM42	No price	In Stock:18524
DDB6U25N16VRBOMA1	Infineon Technologies	Transistors - IGBTs - Modules	Datasheet	IGBT MODULE	$8.93760	In Stock:18526
VS-GP400TD60S	Vishay General Semiconductor - Diodes Division	Transistors - IGBTs - Modules	Datasheet	IGBT MOD 600V 758A INT-A-PAK	No price	In Stock:18528