NTA4153NT1G Details_NTA4153NT1G Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	915mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	230mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.82 nC @ 4.5 V
Vgs (Max)	±6V
Input Capacitance (Ciss) (Max) @ Vds	110 pF @ 16 V
FET Feature	-
Power Dissipation (Max)	300mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-75, SOT-416
Package / Case	SC-75, SOT-416

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