IXTX22N100L Details_IXTX22N100L Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	600mOhm @ 11A, 20V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 15 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	7050 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	700W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PLUS247™-3
Package / Case	TO-247-3

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