SI7758DP-T1-GE3 Details_SI7758DP-T1-GE3 Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,474(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	SkyFET®, TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7150 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

Other

Price advantage, SI7758DP-T1-GE3 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FDFS6N303	Fairchild Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 6A 8SOIC	$0.28130	In Stock:87031
NTB18N06T4	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 15A D2PAK	No price	In Stock:17260
DMT10H010LPS-13	Diodes Incorporated	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 9.4A PWRDI5060	$1.52000	In Stock:40388
HUFA76429D3ST	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 20A TO252AA	No price	In Stock:17270
IXTI12N50P	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 12A TO262	No price	In Stock:17280