RJK6011DJE-00#Z0 Details_RJK6011DJE-00#Z0 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	52Ohm @ 50mA, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	3.7 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	25 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	900mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92MOD
Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)

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