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MOSFETs - Single
STY34NB50 Picture

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STY34NB50

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In Stock:19,858(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
PowerMESH™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
34A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
223 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
9100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
450W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
MAX247™
Package / Case
TO-247-3
Other
Price advantage, STY34NB50 is available in stock and can be delivered on the same day
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