BSS192PE6327 Details_BSS192PE6327 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	SIPMOS®
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	190mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.8V, 10V
Rds On (Max) @ Id, Vgs	12Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id	2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	6.1 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	104 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT89
Package / Case	TO-243AA

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