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MOSFETs - Single
IPL65R650C6SATMA1 Picture

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IPL65R650C6SATMA1

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In Stock:19,566(Ref. price)
Qty.Unit PriceExt. Price
1
$0.62370
$0.62370
Documents
Specifications
DescriptionDetails
Series
CoolMOS™ C6
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
56.8W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Thin-PAK (5x6)
Package / Case
8-PowerTDFN
Other
Price advantage, IPL65R650C6SATMA1 is available in stock and can be delivered on the same day
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