SSM6K514NU,LF Details_SSM6K514NU,LF Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

MOSFETs - Single

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Specifications

Description	Details
Series	U-MOSIX-H
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	11.6mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	6-UDFNB (2x2)
Package / Case	6-WDFN Exposed Pad

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