APTM10DAM02G Details_APTM10DAM02G Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	495A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 200A, 10V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	1360 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	40000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1250W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SP6
Package / Case	SP6

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