APT33N90JCU3 Details_APT33N90JCU3 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tray
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id	3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6800 pF @ 100 V
FET Feature	Super Junction
Power Dissipation (Max)	290W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227
Package / Case	SOT-227-4, miniBLOC

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