NVBG020N090SC1 Details_NVBG020N090SC1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	900 V
Current - Continuous Drain (Id) @ 25°C	9.8A (Ta), 112A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id	4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 15 V
Vgs (Max)	+19V, -10V
Input Capacitance (Ciss) (Max) @ Vds	4415 pF @ 450 V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 477W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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