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MOSFETs - Single
AUIRF7478Q Picture

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AUIRF7478Q

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In Stock:17,766(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
26mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1740 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SO
Package / Case
8-SOIC (0.154", 3.90mm Width)
Other
Price advantage, AUIRF7478Q is available in stock and can be delivered on the same day
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