UPA653TT-E1-A Details_UPA653TT-E1-A Related parameters PDF_Renesas Electronics America Inc-Winwic

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	165mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.4 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	175 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	6-WSOF
Package / Case	6-SMD, Flat Leads

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