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MOSFETs - Single
HUF75631P3 Picture

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HUF75631P3

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In Stock:18,581(Ref. price)
Qty.Unit PriceExt. Price
1
$1.07670
$1.07670
Documents
Specifications
DescriptionDetails
Series
UltraFET™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1.22 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Other
Price advantage, HUF75631P3 is available in stock and can be delivered on the same day
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