SIHG22N50D-GE3 Details_SIHG22N50D-GE3 Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,380(Ref. price)

Qty.	Unit Price	Ext. Price
1	$3.15305	$3.15305

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	230mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	98 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1938 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	312W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

Other

Price advantage, SIHG22N50D-GE3 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IXTA27N20T	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 20V 27A TO263	No price	In Stock:20192
AUIRFR540ZTRL	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 35A DPAK	$1.07564	In Stock:20198
2SK1119(F)	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CH 1000V 4A TO220AB	No price	In Stock:20206
IXTP1R4N100P	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 1000V 1.4A TO220AB	$2.20074	In Stock:20208
IRLZ14STRR	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 10A D2PAK	No price	In Stock:20210