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MOSFETs - Single
IPB26CN10NGATMA1 Picture

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IPB26CN10NGATMA1

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In Stock:13,080(Ref. price)
Qty.Unit PriceExt. Price
1
$0.50440
$0.50440
Documents
Specifications
DescriptionDetails
Series
OptiMOS™
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2.07 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D²PAK (TO-263AB)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, IPB26CN10NGATMA1 is available in stock and can be delivered on the same day
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