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MOSFETs - Single
AUIRL7766M2TR Picture

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AUIRL7766M2TR

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In Stock:14,397(Ref. price)
Qty.Unit PriceExt. Price
1
$1.57780
$1.57780
Documents
Specifications
DescriptionDetails
Series
HEXFET®
Package
Bulk
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
66 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
5.305 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 62.5W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ M4
Package / Case
DirectFET™ Isometric M4
Other
Price advantage, AUIRL7766M2TR is available in stock and can be delivered on the same day
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