IRF6798MTRPBF Details_IRF6798MTRPBF Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	HEXFET®
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	37A (Ta), 197A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.3mOhm @ 37A, 10V
Vgs(th) (Max) @ Id	2.35V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6560 pF @ 13 V
FET Feature	Schottky Diode (Body)
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DIRECTFET™ MX
Package / Case	DirectFET™ Isometric MX

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