IQE013N04LM6ATMA1 Details_IQE013N04LM6ATMA1 Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：12,595(Ref. price)

Qty.	Unit Price	Ext. Price
1	$2.67300	$2.67300

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	OptiMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	31A (Ta), 205A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 51µA
Gate Charge (Qg) (Max) @ Vgs	55 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3900 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	PG-TSON-8-4
Package / Case	8-PowerTDFN

Other

Price advantage, IQE013N04LM6ATMA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRF9530NSTRR	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET P-CH 100V 14A D2PAK	No price	In Stock:17556
IRF1010NLPBF	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 55V 85A TO262	No price	In Stock:17558
FS25SM-9A#B10	Renesas Electronics America Inc	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$4.49280	In Stock:1374
SIA456DJ-T3-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 200V 1.1A/2.6A PPAK	$0.38448	In Stock:17572
IXTH2N150L	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 1500V 2A TO247	$12.27840	In Stock:17578