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MOSFETs - Single
RCD100N20TL Picture

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RCD100N20TL

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In Stock:19,796(Ref. price)
Qty.Unit PriceExt. Price
1
$0.64372
$0.64372
Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Reel (TR)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
850mW (Ta), 20W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
CPT3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Other
Price advantage, RCD100N20TL is available in stock and can be delivered on the same day
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