JANSR2N7380 Details_JANSR2N7380 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Military, MIL-PRF-19500/614
Package	Tray
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V
Rds On (Max) @ Id, Vgs	200mOhm @ 14.4A, 12V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 12 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	2W (Ta), 75W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-257
Package / Case	TO-257-3

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