NTMYS4D6N04CLTWG Details_NTMYS4D6N04CLTWG Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 50W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK4 (5x6)
Package / Case	SOT-1023, 4-LFPAK

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