SCH2825-TL-E Details_SCH2825-TL-E Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	88 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	600mW (Ta)
Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-SCH
Package / Case	6-SMD, Flat Leads

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