IXTX6N200P3HV Details_IXTX6N200P3HV Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：20,114(Ref. price)

Qty.	Unit Price	Ext. Price
1	$53.68450	$53.68450

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2000 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	960W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247PLUS-HV
Package / Case	TO-247-3 Variant

Other

Price advantage, IXTX6N200P3HV is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRFR3707ZCTRLP	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 56A DPAK	No price	In Stock:20534
SIHS90N65E-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	E SERIES POWER MOSFET SUPER-247,	$20.74560	In Stock:20538
TPIC5424LDW	Texas Instruments	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$1.83260	In Stock:4262
IRF630NSPBF	International Rectifier	MOSFETs - Single	Datasheet	HEXFET POWER MOSFET	$0.68400	In Stock:20544
BSZ018NE2LSIATMA1	Infineon Technologies	MOSFETs - Single	Datasheet	BSZ018NE2 - 12V-300V N-CHANNEL P	$0.63650	In Stock:13666