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MOSFETs - Single
IXFX200N10P Picture

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IXFX200N10P

  • IXYS
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  • MOSFET N-CH 100V 200A PLUS247-3
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In Stock:19,636(Ref. price)
Qty.Unit PriceExt. Price
1
$11.05831
$11.05831
Documents
Specifications
DescriptionDetails
Series
HiPerFET™, PolarP2™
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
7600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
830W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3
Other
Price advantage, IXFX200N10P is available in stock and can be delivered on the same day
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