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MOSFETs - Single
TSM4N80CI C0G Picture

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TSM4N80CI C0G

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In Stock:17,702(Ref. price)
Qty.Unit PriceExt. Price
1
$1.01173
$1.01173
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
955 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
ITO-220AB
Package / Case
TO-220-3 Full Pack, Isolated Tab
Other
Price advantage, TSM4N80CI C0G is available in stock and can be delivered on the same day
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