3N164 Details_3N164 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	50mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	300Ohm @ 100µA, 20V
Vgs(th) (Max) @ Id	5V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	375mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-72
Package / Case	TO-206AF, TO-72-4 Metal Can

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