IMBF170R650M1XTMA1 Details_IMBF170R650M1XTMA1 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	CoolSiC™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1700 V
Current - Continuous Drain (Id) @ 25°C	7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	12V, 15V
Rds On (Max) @ Id, Vgs	650mOhm @ 1.5A, 15V
Vgs(th) (Max) @ Id	5.7V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 12 V
Vgs (Max)	+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds	422 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	-
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

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