DMN30H4D0LFDE-7 Details_DMN30H4D0LFDE-7 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	300 V
Current - Continuous Drain (Id) @ 25°C	550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Rds On (Max) @ Id, Vgs	4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	187.3 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	630mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type E)
Package / Case	6-PowerUDFN

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