IRFD9210 Details_IRFD9210 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tube
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	8.9 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	170 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)

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