SI3475DV-T1-GE3 Details_SI3475DV-T1-GE3 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.61Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	500 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SOT-23-6 Thin, TSOT-23-6

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