CPMF-1200-S080B Details_CPMF-1200-S080B Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Z-FET™
Package	Bulk
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	50A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	90.8 nC @ 20 V
Vgs (Max)	+25V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1915 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	313mW (Tj)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die

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