BSC889N03LSGATMA1 Details_BSC889N03LSGATMA1 Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,178(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	OptiMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 28W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TDSON-8-1
Package / Case	8-PowerTDFN

Other

Price advantage, BSC889N03LSGATMA1 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
FQPF8N90C	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 900V 6.3A TO220F	$1.03790	In Stock:28218
IXTH120P065T	IXYS	MOSFETs - Single	Datasheet	MOSFET P-CH 65V 120A TO247	$6.78030	In Stock:1568
SQJ401EP-T1_GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 12V 32A PPAK SO-8	$1.85280	In Stock:4107
SSM5H16TU,LF	Toshiba Semiconductor and Storage	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 1.9A UFV	$0.475	In Stock:4382
SIHP22N60EF-GE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 19A TO220AB	$3.55020	In Stock:1463