IXTF6N200P3 Details_IXTF6N200P3 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	Polar™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	2000 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	143 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	215W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS i4-PAC™
Package / Case	ISOPLUSi5-Pak™

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