SSM3K16FU,LF Details_SSM3K16FU,LF Related parameters PDF_Toshiba Semiconductor and Storage-Winwic

MOSFETs - Single

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Specifications

Description	Details
Series	π-MOSVI
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
Rds On (Max) @ Id, Vgs	3Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id	1.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	9.3 pF @ 3 V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	USM
Package / Case	SC-70, SOT-323

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