PSMN1R6-40YLC,115 Details_PSMN1R6-40YLC,115 Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	1.55mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	126 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7790 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	288W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56; Power-SO8
Package / Case	SOT-1023, 4-LFPAK

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